| 摘要 |
<p>The present invention provides a multi-layered structure, where contamination of impurities into indium target is excellently prevented, and manufacturing method thereof. The multi-layered structure comprises: a backing plate, an impurity diffusion prevention layer, comprising thin film consisting of one or more metals selected from Fe, W, Ta, Te, Nb, Mo, S and Si, formed on the backing plate, and an indium target, formed on the impurity diffusion prevention layer.</p> |
