发明名称 SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, CEILING HEAT INSULATOR, AND HEATER
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a semiconductor device manufacturing method, and a ceiling heat insulator, capable of reducing generation of cracks in the ceiling heat insulator, break of the ceiling heat insulator, and risk of fall of the ceiling heat insulator. <P>SOLUTION: A substrate processing apparatus comprises a heater 206 provided outside a reaction container for processing substrates. The heater 206 comprises: a cylindrical sidewall heat insulator 12; a ceiling heat insulator 16 placed on the sidewall heat insulator 12; and a heat generator 14 provided inside the sidewall heat insulator 12. In the ceiling heat insulator 16 of the heater 206, a plurality of stress releasing portions is disposed from the center of the ceiling heat insulator 16 to the periphery. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012182489(A) 申请公布日期 2012.09.20
申请号 JP20120120457 申请日期 2012.05.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MURATA HITOSHI;KOSUGI TETSUYA;SUGIURA SHINOBU
分类号 H01L21/31;C23C16/44;H01L21/205;H01L21/22 主分类号 H01L21/31
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