发明名称 |
SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, CEILING HEAT INSULATOR, AND HEATER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a semiconductor device manufacturing method, and a ceiling heat insulator, capable of reducing generation of cracks in the ceiling heat insulator, break of the ceiling heat insulator, and risk of fall of the ceiling heat insulator. <P>SOLUTION: A substrate processing apparatus comprises a heater 206 provided outside a reaction container for processing substrates. The heater 206 comprises: a cylindrical sidewall heat insulator 12; a ceiling heat insulator 16 placed on the sidewall heat insulator 12; and a heat generator 14 provided inside the sidewall heat insulator 12. In the ceiling heat insulator 16 of the heater 206, a plurality of stress releasing portions is disposed from the center of the ceiling heat insulator 16 to the periphery. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012182489(A) |
申请公布日期 |
2012.09.20 |
申请号 |
JP20120120457 |
申请日期 |
2012.05.28 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
MURATA HITOSHI;KOSUGI TETSUYA;SUGIURA SHINOBU |
分类号 |
H01L21/31;C23C16/44;H01L21/205;H01L21/22 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|