发明名称 |
MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, ELECTRONIC SYSTEMS, AND MEMORY SYSTEMS, AND METHODS OF FABRICATING THE SAME |
摘要 |
Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer. |
申请公布号 |
US2012236631(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213398617 |
申请日期 |
2012.02.16 |
申请人 |
PARK JEONG HEON;LIM WOO CHANG;OH SE CHUNG;KIM WOO JIN;PARK SANG HWAN;LEE JANG EUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JEONG HEON;LIM WOO CHANG;OH SE CHUNG;KIM WOO JIN;PARK SANG HWAN;LEE JANG EUN |
分类号 |
G11C11/14;H01L29/82 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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