| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the damage of an active area by forming a gate pattern on an upper part of an exposed active guard in an outside area between a cell area and a surrounding circuit area. CONSTITUTION: An active area(210) and a device separation area(220) are etched to form a recess. A conductive substance and a first insulation film are formed on the recess. The first insulation film is etched to form steps in a cell area and a surrounding circuit area. A second insulation film is formed on a font side including the first insulation film. The second insulation film is etched to form a spacer on the active area between the cell area and the surrounding circuit area. A bit line pattern(290) connected to a contact plug is formed on the cell area. A gate pattern is formed on an active guard of the surrounding circuit area.
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