| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the loop oscillation in a multi-finger FET cell and to suppress an increase in a chip area. <P>SOLUTION: A semiconductor device comprises: a multi-finger unit FET cell composed of parallel connection of a unit finger; a designated gate bus line connecting gate fingers of the multi-finger unit FET cell in parallel; and a gate extracting line connected to the designated gate bus line. A connection point between the gate extracting line and the designated gate bus line is shifted from the center in the multi-finger unit FET cell, and thereby the number of gate fingers connected to one side of the connection point is more than the number of gate fingers connected to the other side of the connection point. <P>COPYRIGHT: (C)2012,JPO&INPIT |
