| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor rectifier using a wide band-gap semiconductor that reduces a voltage in which minority carriers are injected and has sufficient surge current resistance. <P>SOLUTION: A semiconductor rectifier comprises: a semiconductor substrate of a first conductivity type that is composed of a wide band-gap semiconductor; a semiconductor layer of the first conductivity type that is formed on the top surface of the semiconductor substrate, has an impurity concentration ranging from 1E+14atoms/cm<SP POS="POST">3</SP>or more to 5E+16atoms/cm<SP POS="POST">3</SP>or less and a thickness of 8 μm or more, and is composed of the wide band-gap semiconductor; first semiconductor regions of the first conductivity type that are formed on a surface of the semiconductor layer and are composed of the wide band-gap semiconductor; second semiconductor regions of the second conductivity type that are formed to be sandwiched by the first semiconductor regions, has a width of 15 μm or more, and are composed of the wide band-gap semiconductor; a first electrode that is formed on the first and second semiconductor regions; and a second electrode that is formed on the under surface of the semiconductor substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
