CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, PROCESS FOR PRODUCING CHALCOGEN COMPOUND POWDER, AND PROCESS FOR PRODUCING CHALCOGEN COMPOUND PASTE

摘要

Chalcogen compound powder containing Cu—In—Ga—Se and having an average particle diameter (DSEM) of 80 nm or less and a low content of carbon is obtained by forming a mixed solvent by mixing together at least any one of a mixture of copper salt and indium salt, a composite hydroxide of copper and indium, and a composite oxide of copper and indium, any one of selenium and a selenium compound, and a solvent having a boiling point of 250° C. or less, and heating the mixed solvent to a temperature of 220° C. to 500° C. A thin film containing Cu—In—Ga—Se and having low resistance is obtained by using paste of the chalcogen compound powder.