| 摘要 |
<p>The present invention provides a method that is for producing an SGZO-type oxide semiconductor thin film suitable for large-area device production, and that has high reproducibility and uses a composition whereby the resistance value at the time of film formation and the resistance value after low-temperature annealing are equivalent, a reduction in resistance resulting from low-temperature annealing not occurring. The method for producing has: a film formation step for forming on a substrate an oxide semiconductor thin film having Sn, Zn, and O, or Sn, Ga, Zn , and O as primary constituent elements, and when the composition ratio of the constituent elements is Sn:Ga:Zn=a:b:c, the composition ratio satisfies a+b = 2, 1 = a = 2, 1 = c = 11/2, and c = -7b/4+11/4; and a heat treatment step that, after the film formation step, performs heat treatment at 100°C or higher and less than 300°C in an oxidizing atmosphere.</p> |
