发明名称 THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
摘要 <p>The present invention provides a novel thin-film transistor, a manufacturing method therefor, and an electric circuit having such a thin-film transistor. This thin-film transistor has a source electrode, a drain electrode, a gate electrode, a gate insulator, and an organic semiconductor film. The source electrode and the drain electrode are insulated from the gate electrode by the gate insulator, and the electric current that flows from the source electrode to the drain electrode through the semiconductor film is controlled by the voltage applied to the gate electrode. Here, the organic semiconductor film is composed of an organic semiconductor material (1) having an aromatic ring, and is a conformation in which a surface (2) formed by the aromatic ring constituting the organic semiconductor material stands substantially perpendicular to a substrate (10); and the molecular axis in which the mobility of the organic semiconductor material (1) is maximum is oriented in the direction of the electric field between the source electrode and the drain electrode in the plane of the organic semiconductor film.</p>
申请公布号 WO2012124666(A1) 申请公布日期 2012.09.20
申请号 WO2012JP56317 申请日期 2012.03.12
申请人 TEIJIN LIMITED;KUSHIDA, TAKASHI 发明人 KUSHIDA, TAKASHI
分类号 H01L51/40;H01L21/336;H01L29/786;H01L51/05 主分类号 H01L51/40
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