| 摘要 |
<P>PROBLEM TO BE SOLVED: To provided a sintered oxide and a sputtering target which are suitable for use in forming an oxide semiconductor film for a display device and have both high electroconductivity and high relative density and by which it is possible to form an oxide semiconductor film having high carrier mobility, and which, in particular, have excellent direct-current discharge stability which renders long-term stable discharge possible even if used in production by a direct-current sputtering method. <P>SOLUTION: The sintered oxide is obtained by mixing a zinc oxide, a tin oxide, and an oxide of at least one metal (M metal) selected from a group composed of Al, Hf, Ni, Si, Ga, In, and Ta and sintering the mixture. When in-plane specific resistance and specific resistance in the direction of a depth are approximated by a Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or smaller. <P>COPYRIGHT: (C)2012,JPO&INPIT |
