发明名称 PATTERN GENERATION METHOD AND CHARGED PARTICLE BEAM-DRAWING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern generation method and an apparatus for reducing a correction residual in loading effect correction. <P>SOLUTION: A pattern generation method, in one aspect of the present invention, for forming a pattern on a sample 10, comprises: changing a dimension of a design pattern 12 by using an area S of the pattern included in each mesh-like region and a total sum of length of outer circumferential sides of the pattern in a pattern forming region of the sample 10 which is virtually divided into a plurality of the mesh-like regions; and correcting a dimension error of the pattern caused by loading effects. By the present invention, a correction residual in the loading effect correction can be reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012182506(A) 申请公布日期 2012.09.20
申请号 JP20120145539 申请日期 2012.06.28
申请人 NUFLARE TECHNOLOGY INC 发明人 EMI KEIKO;SUZUKI JUNICHI;ABE TAKAYUKI
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
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