PHASE-CHANGE MEMORY DEVICE AND MANUFACTURING METHOD AT THE SAME

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to have an etch stop layer including a metal oxide layer which an etch selection ratio is higher than the ratio of a metal nitride layer of a lower portion electrode, thereby minimizing damage of the lower portion electrode, when a knoll structure is formed. CONSTITUTION: A mold oxide layer is formed on a substrate. A lower portion electrode(30) is formed on the mold oxide layer. The lower portion electrode is connected to the substrate. A knoll structure(40) covers a part of the lower portion electrode. The knoll structure includes an etch stop layer(42) and a knoll insulation layer. A phase change layer covers the rest of the lower portion electrode exposed from the knoll structure. The etch stop layer includes a material which is a high etch selection ratio for the lower portion electrode.