| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transient-voltage protection element having low capacitance that can eliminate the effect of an unnecessary parasitic element. <P>SOLUTION: A first epitaxial layer 210 is formed on a semiconductor substrate, and a buried layer 220 is formed in the vicinity of a surface of the first epitaxial layer. A second epitaxial layer 211 is formed on the buried layer, and a first deep diffusion layer 250 is formed in the second epitaxial layer. A Zener diode is formed in the first deep diffusion layer, and a first PN diode is formed spaced apart from the Zener diode. The Zener diode is isolated by a first isolation layer 240, and the first PN diode is isolated by a second isolation layer 241. By serially connecting the Zener diode and the first PN diode in a reverse direction through the buried layer, the effect of an unnecessary parasitic element can be eliminated, and a transient-voltage protection element having low capacitance can be achieved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
