发明名称 |
GROWTH OF III-V LED STACKS USING NANO MASKS |
摘要 |
Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency. |
申请公布号 |
US2012235115(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213355255 |
申请日期 |
2012.01.20 |
申请人 |
KANG SANG WON;SU JIE;NG TUOH-BIN;BOUR DAVID;HSU WEI-YUNG;APPLIED MATERIALS, INC. |
发明人 |
KANG SANG WON;SU JIE;NG TUOH-BIN;BOUR DAVID;HSU WEI-YUNG |
分类号 |
H01L21/205;C23C16/34;C23C16/52;H01L33/06 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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