| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit increase in forward voltage (Vf) and increase a radiant power output (Po), in a FC (Flip-Chip) packaging technology of a semiconductor light-emitting element. <P>SOLUTION: A semiconductor light-emitting element comprises: a laminated semiconductor layer in which a first semiconductor layer having a first conductivity type, a light-emitting layer and a second semiconductor layer having a second conductivity type opposite to the first conductivity type are laminated; a first electrode connected with the first semiconductor layer; and a second electrode provided on a surface of the second semiconductor layer. The second electrode has a plurality of thick film parts each having a film thickness larger than another part. The second electrode includes: a transparent conductive layer permeable to light radiated from the light-emitting layer; an insulation layer laminated on the transparent conductive layer and having a refractive index lower than that of the transparent conductive layer; a conductive metallic reflection layer laminated on the insulation layer; and a conductor part provided through the insulation layer, in which one end is electrically connected with the thick film part of the transparent conductive layer and the other end is electrically connected with the metallic reflection layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
