发明名称 |
TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WELL REGION |
摘要 |
A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner. |
申请公布号 |
US2012235164(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213482311 |
申请日期 |
2012.05.29 |
申请人 |
CREE, INC. |
发明人 |
ZHANG QINGCHUN;AGARWAL ANANT;JONAS CHARLOTTE |
分类号 |
H01L29/16;H01L29/78 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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