METHODS AND APPARATUS FOR GAS DELIVERY INTO PLASMA PROCESSING CHAMBERS
摘要
Methods and apparatus for gas delivery into plasma processing chambers are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a processing volume, a substrate support disposed in the processing volume, an inductively coupled plasma source to generate an electric field within the processing volume that includes one or more regions of local maxima in the magnitude of the electric field, and one or more gas injectors to selectively direct a predominant portion of a process gas flowed through the one or more gas injectors into the one or more regions of local maxima.
申请公布号
WO2012087919(A3)
申请公布日期
2012.09.20
申请号
WO2011US65814
申请日期
2011.12.19
申请人
APPLIED MATERIALS, INC.;CHEBI, ROBERT P.;DETMAR, STANLEY;CHESHIRE, ALAN;ROUPILLARD, GABRIEL;GRANADOS, ALFREDO
发明人
CHEBI, ROBERT P.;DETMAR, STANLEY;CHESHIRE, ALAN;ROUPILLARD, GABRIEL;GRANADOS, ALFREDO