| 摘要 |
A nonvolatile semiconductor memory according to examples of the present invention comprises a memory cell and a peripheral transistor. The memory cell has a first intergate insulating film having a multilayer structure and provided on a floating gate electrode and an isolation insulating layer. The peripheral transistor has a second intergate insulating film having a multilayer structure and provided on a first gate electrode and a second isolation insulating layer. The first and second intergate insulating films have the same structure, and a lowermost insulating layer of the first intergate insulating film on the first isolation insulating layer is thinner than a lowermost insulating layer of the second intergate insulating film on the second isolation insulating layer. |
