ULTRA-LONG SEMICONDUCTOR NANOWIRE STRUCTURE AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed is an ultra-long semiconductor nanowire structure. The width of the ultra-long semiconductor nanowire is widened at intervals, thus preventing the ultra-long semiconductor nanowire structure from rupturing. Also disclosed is a method for manufacturing the ultra-long semiconductor nanowire structure. In the method, the ultra-long semiconductor nanowire structure having width thereof widened at intervals is formed via lithography and etching. The width of the ultra-long semiconductor nanowire structure is widened at intervals, thus preventing the ultra-long semiconductor nanowire structure from rupturing during the etching process, and facilitating the formation of the ultra-long, ultrafine semiconductor nanowire structure.