METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE, THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURED BY SAME, AND DISPLAY DEVICE

摘要

A method for manufacturing a thin-film transistor substrate, comprising: a step of forming a gate electrode (11aa) on an insulating substrate (10a); a step of forming a first gate insulating layer (12a) comprising a silicon nitride film so as to cover the gate electrode (11a), and subsequently supplying an oxygen radical to a front surface of the first gate insulating layer (12a) to conduct a surface treatment; a step of forming a second gate insulating layer (12b) comprising a silicon oxide film on the first gate insulating layer (12a); and a step of forming an oxide semiconductor layer (12a) on the second gate insulating layer (12b).