| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, which is an oxide sintered compact having jointly high conductivity and high relative density, capable of forming the oxide semiconductor film having high carrier mobility. <P>SOLUTION: In this oxide sintered compact obtained by mixing and sintering each powder of zinc oxide, tin oxide and indium oxide, when performing in-plane composition mapping by EPMA to the oxide sintered compact, the ratio of a region having an Sn concentration of 10-50 mass% occupied in the measured area is ≥70 area%. <P>COPYRIGHT: (C)2012,JPO&INPIT |
