| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device with high precision and, in particular, to manufacture a solid-state imaging device with high image quality. <P>SOLUTION: A first waveguide member 118 is formed in an imaging region 103 and a peripheral region 104 of a semiconductor substrate 101. A portion arranged in the peripheral region 104 of the first waveguide member 118 is removed. After that, a planarization step is performed, in which a surface opposite to the semiconductor substrate 101 of the first waveguide member 118 is planarized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
