VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technology for increasing a speed of crystal growth in a silicon film.

SOLUTION: A vapor deposition apparatus 10 comprises: a vapor deposition chamber 36; a heating chamber 8; a mixing chamber 38; a first storage shed 42 for storing a trichlorosilane gas; and a second storage shed 40 for storing a silane-based gas which reacts with a hydrochloric acid gas. The heating chamber 8 communicates with the first storage shed 42 and the mixing chamber 38, heats the trichlorosilane gas and then supplies the trichlorosilane gas to the mixing chamber 38. The mixing chamber 38 communicates with the second storage shed 40 and the vapor deposition chamber 36, mixes the gas supplied from the heating chamber 8 with the silane-based gas and then supplies the mixed gas 34 to the vapor deposition chamber 36. A chamber temperature of the heating chamber 8 is higher than a chamber temperature of the mixing chamber 38.

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