发明名称 INTEGRATED INERTIAL SENSOR AND PRESSURE SENSOR, AND FORMING METHOD THEREFOR
摘要 An integrated inertial sensor and pressure sensor and a forming method therefor. The integrated inertial sensor and pressure sensor comprises: a first substrate (401), a second substrate (501), a third substrate (701), at least one or multiple conductor layers arranged on a first surface of the first substrate (401), and a movable sensitive element of the inertial sensor formed using a first region (I) of the first substrate. The second substrate (501) is bonded with a surface of the conductor layer on the first substrate (401). The third substrate (701) is bonded with on side of the movable sensitive element (407) of the inertial sensor formed using the first substrate (401). The third substrate (701) and the second substrate (501) respectively are arranged on two opposite sides of the movable sensitive element. A sensitive diaphragm comprises at least a second region (II) of the first substrate (401), or one layer among the conductive layers. By using the first substrate (401) to form the movable electrode of the inertial sensor, and by using the first substrate (401) or the conductive layers to form the sensitive diaphragm of the pressure sensor, the integrated pressure sensor and inertial sensor formed are compact in size, low costs, and a great reliability after packaging.
申请公布号 WO2012122878(A1) 申请公布日期 2012.09.20
申请号 WO2012CN71494 申请日期 2012.02.23
申请人 MEMSEN ELECTRONICS INC;LIU, LIANJUN 发明人 LIU, LIANJUN
分类号 G01P15/125;B81B3/00;B81C1/00;G01L1/14;G01P3/44 主分类号 G01P15/125
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