PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTOLITHOGRAPHIC PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a photoresist composition useful in forming fine patterns using negative tone development processes and a method of forming photolithographic patterns.

SOLUTION: A photoresist composition comprises: a first polymer comprising units of the following formulas (I), (II) and (III); a second polymer comprising units of the following formulas (IV) and (V); and a photoacid generator.

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