| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which an electric field in a semiconductor layer is hard to be disturbed even when an external charge rushes in an end part of a semi-insulating layer. <P>SOLUTION: A semiconductor device comprises: a semiconductor layer; and a semi-insulating layer formed on the semiconductor layer and having electric conductivity lower than that of the semiconductor layer. Among regions in the semiconductor layer including a top face of the semiconductor layer, a first semiconductor region is formed in a region below an end part of the semi-insulating layer. Among the regions in the semiconductor layer including the top face of the semiconductor layer, a second semiconductor region is formed in at least a part of a region below the semi-insulating layer. An impurity density of the first semiconductor region is higher than an impurity density of the second semiconductor region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
