| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress short circuit between contact plugs and reduction in a withstanding voltage between contact plugs. <P>SOLUTION: A semiconductor storage device has: a substrate; a plurality of element regions sectioned so as to extend in a first direction parallel to a principal surface of the substrate in the substrate; a plurality of selection gates SG formed so as to extend in a second direction vertical to the first direction; and a contact region provided between the selection gates on the substrate, and including a plurality of contact plugs CW formed on the individual element region. The contact region has a plurality of subregions in each of which N (N is an integer equal to or greater than 2) contact plugs are formed on the N continuous element regions so as to be aligned on a straight line not parallel to the first and second directions. A value of the N is set to be different for each subregion. Each of the contact plugs has an elliptical or rectangular planar shape, and is arranged so that a long side thereof is inclined to the first direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
