| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element which has improved current utilization efficiency, and a method of manufacturing the same. <P>SOLUTION: A semiconductor laser element comprises: a first cladding layer 12 of a first conductivity type; an active layer 13 formed on the first cladding layer 12; a second cladding layer 14 of a second conductivity type formed on the active layer 13; a ridge portion 2 of the second conductivity type formed in a predetermined region on a first p-cladding layer 14; and an n-type ion implantation layer 16a of the first conductivity type formed on the first p-cladding layer 14 in a region in the vicinity of the ridge portion 2 which is different from the predetermined region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
