SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INSULATION FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method which can efficiently manufacture a highly reliable semiconductor device which includes an insulation film made from a material containing a polymer of a polymerizable compound which is an organic compound having a chemical structure not containing Si, and in which a problem of increase in a dielectric constant is prevented.

SOLUTION: A semiconductor manufacturing method of the present invention comprises: an insulation film formation process of forming an insulation film made from a material containing a polymer of a polymerizable compound which is an organic compound having a chemical structure not containing Si, so as to cover a semiconductor substrate on which elements are formed; a nitrogen-based etching process of performing plasma etching on the insulation film by using a nitrogen-based gas; and a nitrogen content ratio reduction process of reducing a nitrogen content ratio of the insulation film on which the nitrogen-based etching is performed.

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