| 摘要 |
<p>An MEMS inertial sensor comprising: a movable sensitive element (103, 104, 203, 204, 301, 901, and 902), a second substrate (501), and a third substrate (10). The movable sensitive element (103, 104, 203, 204, 301, 901, and 902) is formed using a first substrate (401). The first substrate (401) is made from a single-crystal semiconductor material. The first substrate (401) comprises a first surface and a second surface opposite each other. One or multiple conductive layers are formed on the first surface of the first substrate (401). The second substrate (501) is bonded with a surface of the one or multiple conductive layers on the first substrate (401). The third substrate (10) is bonded with one side of the movable sensitive element (103, 104, 203, 204, 301, 901, and 902). Also, the third substrate (10) and the second substrate (501) respectively are arranged on two opposite sides of the movable sensitive element (103, 104, 203, 204, 301, 901, and 902). Also provided is a method for forming the MEMS inertial sensor. In the present invention, as the sensitive element of the sensor is made from the single-crystal semiconductor material, the movable sensitive element of the inertial sensor manufactured has a greater thickness, thus increasing the mass of the mass block, and improving the sensitivity of the inertial sensor.</p> |
