| 摘要 |
<p>Provided is a light-emitting diode having a protective film and an electrode film thereabove formed to a uniform thickness, and a method for manufacturing the light-emitting diode. The light-emitting diode has, on an upper part, a flat portion and a mesa-structure unit having a sloped side surface and a top surface. At least some of each of the flat portion and the mesa-structure portion is covered by the protective film and the electrode film in the stated order. The sloped side surface is formed by wet etching, and the horizontal sectional area is formed continuously smaller toward the top surface. The protective film covers the sloped side surface, a peripheral region of the top surface, and at least some of the flat portion; and has an electrification window through which a portion of the front surface of a compound semiconductor layer is exposed within the peripheral region as seen from above. An electrode layer is a continuous film making direct contact with the front surface of the compound semiconductor layer exposed through the electrification window, and covering at least some of the protective film formed on the flat portion, the electrode layer formed so that a light emission hole is provided in the top surface of the mesa-structure portion.</p> |
