| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of reducing a forming processing time. <P>SOLUTION: In each of a plurality of nonvolatile memory cells, a variable resistive element and a rectifier element are connected in series. At a first timing, a control part selects multiple first lines for every N lines from a plurality of word lines, where N is an integer equal to or greater than 1; sets them to a selected potential; and fixes at least the potentials of unselected word lines adjacent to the selected multiple word lines. At a second timing, which comes after the first timing, the control part sets the selected multiple word lines to a floating state. At a third timing, which comes after the second timing, the control part selects one second line from a plurality of bit lines, and sets it to a forming potential. <P>COPYRIGHT: (C)2012,JPO&INPIT |
