| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage element capable of initialization at low voltage without generating small hillocks at a boundary face between an electrode and a resistance change layer. <P>SOLUTION: A nonvolatile storage element comprises a resistance change layer 116 provided between a lower electrode 105 and an upper electrode 107, in which a resistance value changes reversibly based on an electric signal supplied between the both electrodes. The resistance change layer 116 includes at least two layers of a first resistance change layer 1161 and a second resistance change layer 1162. The first resistance change layer 1161 is made from a first transition metal oxide 116b, and the second resistance change layer 1162 is made from a second transition metal oxide 116a and a third transition metal oxide 116c. An oxygen shortage degree of the second transition metal oxide 116a is higher than an oxygen shortage degree of the first transition metal oxide 116b and also higher than an oxygen shortage degree of the third transition metal oxide 116c. The second transition metal oxide 116a and the third transition metal oxide 116c contact the first resistance change layer 1161. <P>COPYRIGHT: (C)2012,JPO&INPIT |
