发明名称 ELECTRON BEAM IRRADIATION APPARATUS AND ELECTRON BEAM DRAWING APPARATUS
摘要 According to one embodiment, an electron beam irradiation apparatus comprises an objective lens configured to irradiate a specimen surface with an electron beam, an electron detector which is provided between the objective lens and the specimen surface and which is configured to detect reflected electrons or secondary electrons emitted from the specimen surface, and an antireflection mechanism which is provided between the electron detector and the specimen surface. The antireflection mechanism has a plurality of holes following spiral trajectories of reflected electrons or secondary electrons emitted from the specimen surface and is configured to prevent the reflected electrons or secondary electrons from being re-reflected toward the specimen surface and to direct a part of the reflected electrons or secondary electrons to the electron detector.
申请公布号 US2012235054(A1) 申请公布日期 2012.09.20
申请号 US201113240242 申请日期 2011.09.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NISHIMURA SHINSUKE;OGASAWARA MUNEHIRO
分类号 H01J3/14 主分类号 H01J3/14
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