发明名称 |
OPTICAL SEMICONDUCTOR ELEMENT, SEMICONDUCTOR LASER, AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR ELEMENT |
摘要 |
An optical semiconductor element includes: a grating base layer including a projection-recess structure disposed over a substrate; and a grating cover layer including a group III-V semiconductor having three or more elements, wherein the grating cover layer includes a first region which is disposed over recessed portions of the grating base layer and which has a compositional ratio of a group III-V semiconductor having a first refractive index, and a second region which is disposed over projecting portions of the grating base layer and which has a compositional ratio of a group III-V semiconductor having a second refractive index that is smaller than the first refractive index, wherein the grating base layer includes a group III-V semiconductor having a third refractive index that is smaller than the first refractive index. |
申请公布号 |
US2012236394(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213416075 |
申请日期 |
2012.03.09 |
申请人 |
HAYAKAWA AKINORI;FUJITSU LIMITED |
发明人 |
HAYAKAWA AKINORI |
分类号 |
H01S5/343;G02B5/18;G02F1/37;H01L21/20 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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