发明名称 OPTICAL SEMICONDUCTOR ELEMENT, SEMICONDUCTOR LASER, AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR ELEMENT
摘要 An optical semiconductor element includes: a grating base layer including a projection-recess structure disposed over a substrate; and a grating cover layer including a group III-V semiconductor having three or more elements, wherein the grating cover layer includes a first region which is disposed over recessed portions of the grating base layer and which has a compositional ratio of a group III-V semiconductor having a first refractive index, and a second region which is disposed over projecting portions of the grating base layer and which has a compositional ratio of a group III-V semiconductor having a second refractive index that is smaller than the first refractive index, wherein the grating base layer includes a group III-V semiconductor having a third refractive index that is smaller than the first refractive index.
申请公布号 US2012236394(A1) 申请公布日期 2012.09.20
申请号 US201213416075 申请日期 2012.03.09
申请人 HAYAKAWA AKINORI;FUJITSU LIMITED 发明人 HAYAKAWA AKINORI
分类号 H01S5/343;G02B5/18;G02F1/37;H01L21/20 主分类号 H01S5/343
代理机构 代理人
主权项
地址