SEMICONDUCTOR DEVICE

摘要

An active region (10) through which a current passes when a semiconductor device is in an on-state and a withstand voltage structure part (11) which surrounds the active region (10) are provided. Within the active region (10), the front surface of a semiconductor substrate is provided with a MOS gate structure which is configured of a p-well region (2), and an n+-source region (3), a gate electrode (5), a source electrode (6) and the like. A drain electrode (7) that is in contact with an n--drift region (1) is provided from the back surface to the lateral surface of the semiconductor substrate. The drain electrode (7) forms a Schottky junction with the n--drift region (1), which is formed of the semiconductor substrate. In the withstand voltage structure part (11), at least the outer peripheral end portion of the semiconductor substrate is provided with a layer (20) for reducing the leakage current from the outer peripheral end portion (a leakage current reducing layer (20)).