| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, which is an oxide sintered compact having jointly high conductivity and high relative density, capable of forming the oxide semiconductor film having high carrier mobility, and also having extremely excellent in-plane uniformity. <P>SOLUTION: In this oxide sintered compact obtained by mixing and sintering each powder of zinc oxide, tin oxide and indium oxide, when the oxide sintered compact is subjected to X-ray diffraction, assuming that intensity of XRD peak near 2θ=34° is A, intensity of XRD peak near 2θ=31° is B, intensity of XRD peak near 2θ=35° is C, and intensity of XRD peak near 2θ=26.5° is D, following formula (1) is satisfied: [A/(A+B+C+D)]×100≥70 (1). <P>COPYRIGHT: (C)2012,JPO&INPIT |
