| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a display device having a thin-film transistor with self-alignment structure having stable characteristics, and to provide an electronic apparatus having the display device. <P>SOLUTION: A first low resistance region 21 having oxygen concentration lower than that of a channel region 20A is provided to at least a part in a depth direction from an upper surface of a source region 20S and a drain region 20D of a first oxide semiconductor film 20 of a thin-film transistor 1. A second oxide semiconductor film 80 is provided in a region in a substrate 11 other than a region where the thin-film transistor 1 is provided. A second low resistance region 81 having oxygen concentration lower than that of the channel region 20A is provided to at least a part in the depth direction from an upper surface of the second oxide semiconductor film 80. The thin-film transistor 1, the second oxide semiconductor film 80, and the substrate 11 are covered with a high resistance film 50. In the high resistance film 50, a first translucent region 51 is provided in a region contacting with the first low resistance region 21, and a second translucent region 52 is provided in a region contacting with the second low resistance region 81. <P>COPYRIGHT: (C)2012,JPO&INPIT |
