| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor single crystal having an even concentration of carriers in a crystal. <P>SOLUTION: The group III nitride semiconductor single crystal having a C surface area and a faceted area is obtained by growing a group III nitride semiconductor single crystal while mixing C surfaces and faceted surfaces other than the C surface. In the C surface area, the amount of oxygen content is at most 1×10<SP POS="POST">18</SP>cm<SP POS="POST">-3</SP>, and the amount of dopants other than oxygen is at least 2×10<SP POS="POST">17</SP>cm<SP POS="POST">-3</SP>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
