| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench gate, which achieves reduction in wiring resistance of the gate and a higher working speed. <P>SOLUTION: In a trench MOSFET provided with a bridge electrode 33B orthogonal to striped trenches T, source pads 35s included in a first external lead out electrode are integrally formed. The source pads 35s have a narrowed part k, and a gate pad 35g as a second external lead out electrode is extended and formed in the narrowed part k. At least a part of a surface of the bridge electrode includes an aluminum layer which is the same metal layer as the source pad 35s. <P>COPYRIGHT: (C)2012,JPO&INPIT |
