| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a member for an apparatus for growing a single crystal formable of a carbon material having low purity, and including excellent heat shielding effect, in which SIO is hardly cured and coagulated, and to provide a method for producing the member for the apparatus for growing the single crystal. <P>SOLUTION: The member for the apparatus for growing the single crystal is formed of the carbon material, and a part or the whole of its surface is covered with an Si-impregnated layer. In the method for producing the member for the apparatus for growing the single crystal, a part or the whole of an original material formed of the carbon material is dipped into a silicon melt, to thereby cover the part or the whole of the surface of the original material with the Si-impregnated layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
