发明名称 |
REDUCING EFFECTS OF ERASE DISTURB IN A MEMORY DEVICE |
摘要 |
A method for programming includes initially biasing a subset of a plurality of control gates of a string of memory cells with a negative voltage, wherein the subset is less than all of the plurality of control gates of the string. The control gate of a selected memory cell is subsequently biased with a programming voltage during a programming phase. |
申请公布号 |
US2012236640(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213486028 |
申请日期 |
2012.06.01 |
申请人 |
GODA AKIRA;TORSI ALESSANDRO;MUSILLI CARLO;HELM MARK A.;RIVERS DOYLE;MICRON TECHNOLOGY, INC. |
发明人 |
GODA AKIRA;TORSI ALESSANDRO;MUSILLI CARLO;HELM MARK A.;RIVERS DOYLE |
分类号 |
G11C16/16;G11C16/04 |
主分类号 |
G11C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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