| 摘要 |
The object of the present invention is a non-volatile memory cell (10) containing at least two distinct memory zones (17), each formed in a resistivity-change material (14), the memory cell (10) containing at least one heating element (16) for each memory zone (17), each heating element (16) having at least two ends, one of which is connected to a supply line (V1, V2, . . . , VN) and the other of which is brought into contact with the resistivity-change material (14), characterized in that the resistivity-change material (14) is arranged in a single block (34) common to each of the memory zones (17) of the memory cell (10), so as to create distinct memory zones (17) locally. |
