| 摘要 |
<p>A high-voltage integrated circuit device (100) is provided with an n region (3), which is a high-side floating potential region, an n- region (4) that forms a high-voltage junction terminal region (93), and an n- region (2), which is a LVDD potential region, on a surface layer of a p semiconductor substrate (1). A low-side circuit part (91) is disposed on the n- region (2). A universal contact region (58) that makes ohmic contact is disposed beneath a pickup electrode (59), which is disposed on the high-voltage junction terminal region (93). The universal contact region (58) has a constitution in which p+ regions (56) and n+ regions (57) are in alternating contact following along the surface of the p semiconductor substrate (1). By disposing the universal contact region (58) thusly, the amount of carriers flowing into the low-side circuit part (91) can be reduced when a negative surge voltage is input. Thus, erroneous operation of the logic part of the low-side circuit part (91) and latching up of the low-side circuit part (91) can be prevented.</p> |
