SEMICONDUCTOR DEVICE HAVING DRIFT REGION AND DRIFT CONTROL REGION

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor device having a drift path or a drift region with low on-resistance.

SOLUTION: A semiconductor device comprises: a drift region 2 of a first conductivity type in a semiconductor base material; a drift control region 3 that is disposed adjacent to the drift region 2 in the semiconductor base material and is composed of a semiconductor material; an accumulation dielectric 4 disposed between the drift region 2 and the drift control region 3; a base-material region 8; a drain region 5 that is isolated from the base-material region 8 and is adjacent to the accumulation dielectric 4; a source region 9 isolated from the drift region 2 by the base-material region 8; a gate electrode 15 insulated from the semiconductor base material by a gate dielectric 16, and extending from the source region 9 to the drift region 2 adjacently to the base-material region 8; a drain electrode 11 contacting the drain region 5; and a semiconductor region 27 complementarily doped to the drain region 5. The semiconductor region 27 is disposed between the drain electrode 11 and the drift region 2 and is adjacent to the drain electrode 11.

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