发明名称 |
PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
A photoelectric conversion device with high open-circuit voltage and high conversion efficiency is provided. A photoelectric conversion device including a p-n junction is formed by stacking a first semiconductor layer having p-type conductivity, a second semiconductor layer having p-type conductivity, and a third semiconductor layer having n-type conductivity between a pair of electrodes. The first semiconductor layer is a compound semiconductor layer, and the second semiconductor layer is formed using an organic compound and an inorganic compound. A material having a high hole-transport property is used as the organic compound, and a transition metal oxide having an electron-accepting property is used as the inorganic compound.
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申请公布号 |
US2012234392(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213410453 |
申请日期 |
2012.03.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ASAMI YOSHINOBU;YAMAZAKI SHUNPEI |
分类号 |
H01L31/0256;H01L31/18;H01L51/46 |
主分类号 |
H01L31/0256 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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