METHOD OF MANUFACTURING LIGHT EMITTING DIODE

摘要

PURPOSE: A light emitting diode manufacturing method is provided to decrease an operating voltage of an element by reducing ohmic resistance between a P type semiconductor layer and a P electrode. CONSTITUTION: A substrate including an N type semiconductor layer and an active layer is provided(S110). A P type semiconductor layer is formed by supplying nitrogen gas, gallium gas, and magnesium gas while maintaining a first temperature of the substrate(S120). The supply of the gallium gas is stopped and an Mg(magnesium) layer is formed on the P type semiconductor layer while cooling the first temperature of the substrate to a second temperature(S130). Mg of the Mg layer is spread on the P type semiconductor layer to form a high-concentration doping semiconductor layer(S140). [Reference numerals] (S110) Providing a substrate; (S120) Forming a P-type semiconductor layer; (S130) Forming an Mg layer on the P-type semiconductor layer; (S140) Forming a high-concentration doping semiconductor layer; (S150) Forming an N pad, a P electrode, and a P pad