| 摘要 |
PURPOSE: A method for manufacturing an epitaxial wafer is provided to save costs and time by reducing a residual moisture process, thereby improving process yield. CONSTITUTION: A wafer is loaded within a chamber(S100). Residual moisture is eliminated by repeatedly performing high temperature and low temperature processes(S200). An epitaxial process is performed(S300). The repeat time of the high temperature and low temperature processes is 3 to 7times. The high temperature and low temperature processes are performed for 5 to 15minutes. Moisture elimination gas is injected into the chamber while high temperature is maintained. [Reference numerals] (S100) A wafer is loaded; (S200) Residual moisture is eliminated by repeatedly performing high temperature and low temperature processes; (S300) An epitaxial process is performed |
