| 摘要 |
PURPOSE: A semiconductor device is provided to secure the reliability of the semiconductor device by reducing the generation of etching remains in a groove of a semiconductor substrate. CONSTITUTION: An isolation film is embedded in a substrate and includes plural openings. Plural dummy spreading layers(20) are installed on the substrate in the openings. Plural resistance elements(10) are not overlapped with the dummy spreading layers and placed on the isolation film in regard to a resistance element forming area(40). The resistance elements are elongated in a first direction. Plural dummy resistance elements(12) are placed on the isolation film and the dummy spreading layers and elongated in the first direction. |
