| 摘要 |
In a plasma processing apparatus, a first electrode (34) is attached to a grounded evacuable processing chamber (10) via an insulating material or a space and a second electrode (20) disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit (30) applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit (70) applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit (44) supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor (54) electrically is connected between the first electrode and a ground potential. |
